Powerpoint animation of an Oblique Evaporation Concept

2008 ECS Phoenix - Quantum (5 5 12) Silicon Nanowire 300K MOSFET.doc

In which we present a 300K Si nanowire (NW) quantized planar nMOSFET fabricated on (5 5 12) Si with a standard CMOS process with embedded Si NWs of about 2.0 nm width. The output has up to 15 narrow, regularly spaced spikes. Nine new one dimensional (1D) artificial inert atoms are discovered. This is the world's first high quality room temperature quantum silicon transistor, and several new applications are proposed in Reference 24.
This paper can also be found in the Symposium Hardback Book from the Electrochemical Society Meeting in Phoenix, May 18-23, 2008.
"ECS Transactions - Phoenix, AZ. Volume 13, Advanced Si-Based CMOS 4".

2007 ECS Chicago - Channel Direction Mobility (5 5 12), (114).pdf

2007 ECS Chicago - Implant Profiles (111), (5 5 12), (114), (001).pdf

2006 ECS Cancun - Qss on (001), (114), (5 5 12).pdf

2006 ECS Cancun - Oxidation High Index Si.pdf

2004 NSTI Boston - Multiple Nanogroove Width Selection.pdf

2004 AVS Zacatecas 2 - One Dimensional Artificial Atom MOSFET.doc

2004 AVS Zacatecas 1 - First SPIKEMOS Transistor and Applications.doc